| 摘要 |
FIELD: semiconductor light-emitting devices such as diodes. ^ SUBSTANCE: proposed invention relates, in particular, to light-emitting diodes built around broadband compounds of AIIIBV type that function to emit light in blue region of visible spectrum whose wavelength is 450 - 500 nm. Element structure incorporates substrate, buffer layer made of nitride material, n-contact layer made of Si-doped GaN, active layer with two or more quantum wells made of InxGa1 - xN, and barriers separating these wells and made of Si-doped nitride material, emitter layer made of Mg-doped AlYGa1 - yN, and p-contact layer made of Mg-doped nitride material. Molar fraction of indium X linearly reduces in InxGa1 - xN through thickness of quantum wells from 0.35 to 0.1 toward n-contact layer. Molar fraction of aluminum Y in emitter layer composition linearly reduces from its maximum value of 0.3 + Z on emitter layer surface bordering the active layer to Z on emitter layer surface bordering p-contact layer, where Z is molar fraction of aluminum in p-contact layer composition using AlZGa1 - ZN as nitride material, where 0 <= Z <= 0.1. Active layer is doped with Si, where Si concentration is minimum 5 x 1018cm-1; thickness "h1" of active-layer quantum wells is 1.5 <= h1 <= 3 nm; thickness "h2" of barriers separating quantum wells is 5 <= h2 <= 15 nm, and thickness "hc" of emitter layer is 10 <= hc <= 30 nm. ^ EFFECT: enhanced efficiency of light-emitting diodes. ^ 1 cl, 1 dwg, 1 tbl |
