发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE |
摘要 |
A strained semiconductor device suitable for use in an integrated circuit and a method for manufacturing the strained semiconductor device. A mesa isolation structure is formed from a semiconductor-on-insulator substrate. A gate structure is formed on the mesa isolation structure. The gate structure includes a gate disposed on a gate dielectric material and has two sets of opposing sidewalls. Semiconductor material is selectively grown on portions of the mesa isolation structure adjacent a first set of opposing sidewalls of the gate structure and then doped. The doped semiconductor material is silicided and protected by a dielectric material. The gate is silicided wherein the silicide wraps around a second set of opposing sidewalls and stresses a channel region of the semiconductor device.
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申请公布号 |
KR20060062035(A) |
申请公布日期 |
2006.06.09 |
申请号 |
KR20057024868 |
申请日期 |
2004.06.05 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KRIVOKAPIC ZORAN |
分类号 |
H01L21/336;H01L29/10;H01L29/423;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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