| 摘要 |
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit including the same. The method for manufacturing the semiconductor device, among other steps, includes forming an L-shaped spacer ( 410 ) proximate a sidewall of a gate structure ( 130 ) located over a substrate ( 110 ), and implanting halo/pocket implant regions ( 620 ) through the L-shaped spacer ( 410 ) and in the substrate ( 110 ).
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