VERFAHREN UM EIN DÜNNSCHICHT-BAUELEMENT ZU TRENNEN

摘要

A separation layer (120) is provided on a substrate (100), and a thin film device (140) such as TFT is formed thereon. Separation accelerating ions such as hydrogen ions are implanted into the separation layer (120) in the course of the process for forming the thin film device (140). After the formation of the thin film device (140), the thin film device (140) is preferably joined to a transfer material (180) through an adhesive layer (160), and irradiated with laser light from the substrate side. This causes separation in the separation layer (120) by using also the action of the separation accelerating ions. The thin film device (140) is separated from the substrate (100). This permits transfer of a desired thin film device to any substrate.