发明名称 LOCAL INPUT/OUTPUT LINE PRECHARGE CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent consumption of a needless current by eliminating needless precharege operation at write operation of a semiconductor memory apparatus. SOLUTION: This local input/output line precharge circuit of the semiconductor memory device comprises a precharge control unit which responds to a continuous write signal activated when write operation continues and outputs a precharge control signal to precharge a pair of local input/output lines, an equalization unit precharging and equalizing the pair of local input/output lines in response to the precharge control signal, and a data output unit outputting data signals of a global input/output lines to the pair of local input/output lines in response to output signal of the equalization unit. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006147122(A) 申请公布日期 2006.06.08
申请号 JP20050116501 申请日期 2005.04.14
申请人 HYNIX SEMICONDUCTOR INC 发明人 HA SUNG JOO;CHO HO YOUB
分类号 G11C11/417;G11C11/409 主分类号 G11C11/417
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