发明名称 INTERNAL VOLTAGE GENERATOR FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an internal voltage generator for a semiconductor device capable of outputting a constant voltage regardless of change of a supply voltage. SOLUTION: The internal voltage generator includes: a current mirror unit 201 which has a first transistor P3 connected between the supply voltage and a first node (a), a second transistor N2 connected between the first node and a second node (c), a third transistor P4 connected between the supply voltage and a third node (b) and a fifth transistor N3 connected between the second node and the ground, and in which common gates of the first and third transistors are connected to the first node; a first driver 202 controlled by output signals from the first and second nodes of the current mirror unit; a second driver controlled by the output signal of the first driver; and a voltage divider 204 connected between the output node of the second driver and the ground. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006146868(A) 申请公布日期 2006.06.08
申请号 JP20050155692 申请日期 2005.05.27
申请人 HYNIX SEMICONDUCTOR INC 发明人 BYEON SANG JIN;PARK KEE TEOK
分类号 G05F3/26;H03F3/34;H03K19/00 主分类号 G05F3/26
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