| 摘要 |
The present invention provides a magnetic memory device capable of performing reading operation with lower power consumption and at high read precision and a method of reading the magnetic memory device. Sense bit lines ( 21 A, 21 B) are provided in a bit line direction for each pair of magnetoresistive devices ( 12 A, 12 B) constructing a storage cell ( 12 ) and a read current is supplied. The read currents passed through the pair of magnetoresistive devices ( 12 A, 12 B) flow to the ground via a sense word line ( 31 ). Further, by providing a constant current circuit ( 108 B) commonly for plural sense word lines ( 31 ), the sum of a pair of read currents passing through the pair of magnetoresistive devices ( 12 A, 12 B) in one storage cell constant, and information is read from the storage cell ( 12 ) on the basis of the difference between the pair of read currents. By sharing the constant current circuit ( 108 B), variations in the sum of the pair of read currents can be reduced, and power consumption can be also reduced.
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