发明名称 |
FORMATION OF A SILICON GERMANIUM-ON-INSULATOR STRUCTURE BY OXIDATION OF A BURIED POROUS SILICON LAYER |
摘要 |
A simple and direct method of forming a SiGe-on-insulator that relies on the oxidation of a porous silicon layer (or region) that is created beneath a Ge-containing layer is provided. The method includes the steps of providing a structure comprising a Si- containing substrate having a hole-rich region formed therein and a Ge- containing layer atop the Si-containing substrate; converting the hole- rich region into a porous region; and annealing the structure including the porous region to provide a substantially relaxed SiGe-on-insulator material.
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申请公布号 |
KR20060061839(A) |
申请公布日期 |
2006.06.08 |
申请号 |
KR20067003316 |
申请日期 |
2006.02.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;CHOE, KWANG SU;FOGEL KEITH F.;SADANA DEVENDRA K. |
分类号 |
H01L27/12;C22F1/10;H01L21/20;H01L21/762 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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