| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device in which enhancement of SN ratio and enlargement of dynamic range can be realized simultaneously. SOLUTION: The solid-state imaging device comprises a photodiode PD for storing signal charges by photoelectric converting the incident light, a transistor 11 for transferring the signal charges stored in the photodiode PD, a floating diffusion FD for converting the signal charges transferred by the transfer transistor 12 into a signal voltage, an MOS capacitor 14 connected to the floating diffusion FD, and a section 15 for controlling a voltage Vcap applied to the MOS capacitor 14 wherein conversion efficiency of the floating diffusion FD can be controlled variably, by turning the capacitor voltage Vcap that is applied to the MOS capacitor 14 on/off at the voltage control section 15. COPYRIGHT: (C)2006,JPO&NCIPI
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