发明名称 CMOS IMAGE SENSOR CAPABLE OF GLOBAL EXPOSURE WITHOUT FLAKE AND OVERFLOW PROBLEMS, AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a CMS image sensor capable of global exposure without flake and overflow problems and to provide its manufacturing method. SOLUTION: This CMOS image sensor of this invention is equipped with a photodiode region that generates electric charge by incident light, storage diffusion region that stores electric charge arranged on one side of the photodiode region, resetting diffusion region that ejects electric charge arranged on the other side of the photodiode region, reading diffusion region that transmits electric charge stored in the store diffusion region arranged on one side of the storage diffusion region, and suspension diffusion region that transfers electric charge to the resetting diffusion region arranged between the resetting diffusion region and the photodiode region. As a result, it is possible to take a flash shutdown picture of a moving object without a problem of image damage caused by flake and overflow phenomena. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006148104(A) 申请公布日期 2006.06.08
申请号 JP20050330613 申请日期 2005.11.15
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 PARK YOUNG-HOON;OH TAE-SEOK
分类号 H01L27/146 主分类号 H01L27/146
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