| 摘要 |
PROBLEM TO BE SOLVED: To form a transfer gate having a double layer gate electrode structure in a proper pattern to obtain a high transfer characteristic. SOLUTION: A lower layer electrode material serving as a transfer electrode through a gate insulating film is formed on the entire face of a silicon substrate, and after an intermediate insulating film is formed, the intermediate insulating film and the lower layer electrode material are etched, resulting in forming a transfer electrode pattern. Next, an upper layer electrode material serving as a bias electrode is formed on the entire face, and after a hard mask composed of an insulating film serving as a mask material is formed when ions are implanted on a photoelectric transfer, the hard mask and upper layer electrode material are etched, resulting in forming a bias electrode pattern. Thereafter, ions are implanted on the photoelectric converter to form the photoelectric converter. COPYRIGHT: (C)2006,JPO&NCIPI
|
