| 摘要 |
<p>An Sb-Te base alloy sintered sputtering target containing at least one of Sb and Te as a primary component, characterized in that it has a surface roughness Ra of 0.4 µm or less, a purity except a gas component of 4N or higher, a content of a gas component as an impurity of 1500 ppm or less and an average crystal grain diameter of 50 µm or less; and the above Sb-Te base alloy sintered sputtering target, characterized in that the density of defects having a maximum length of 10 µm or more due to the surface finishing by machine work is 80 pieces or less in an area of 800 µm square. The above sintered sputtering target has a Sb-Te base alloy sputtering target structure being improved in fineness and uniformity, is inhibited in the occurrence of clacks, can prevent the occurrence of arcing during sputtering, is reduced in concave and convex shapes in its surface due to sputter erosion, and is an Sb-Te base alloy sputtering target having good quality.</p> |
