| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a mask for charged particle exposure in which inner stress generating in a mask pattern formation region can be decreased and a mask pattern can be formed with high accuracy. <P>SOLUTION: A stencil mask 12 comprises silicon 14, a membrane 26, a slit 28 and so on, and adhered to a frame 30 at predetermined adhesion points 32. After adhesion, inner stress is generated in the stencil mask 12, however, the inner stress concentrates on the slits 28, which results in about≤4 MPa inner stress, at most≤10 MPa, in the membranes 26 in the mask pattern formation region. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
