| 摘要 |
chemical vapor deposition (CVD) equipment and a CVD method using the same enhance production yield by preventing non-reacted gas from agglomerating on a substrate before the plasma reaction is induced. This source gas is composed of first and second gases. Only the first gas is initially supplied into the process chamber of the CVD equipment. Then the second source gas and the first source gas are supplied as a mixture but at this time are dumped to the exhaust section of the CVD equipment so as to bypass the process chamber. After a delay, the first source gas and the second source gas are supplied together as source gas into the process chamber and at this time, an RF power is applied to the source gas to induce the plasma reaction that forms a film on a wafer disposed inside the chamber. Thus, non-reacted gas is prevented from agglomerating on the substrate. As a result, the film has a high degree of uniformity.
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