| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a high reliability and excellent electric characteristics by using a low dielectric constant insulation film having a hydrophobic property. SOLUTION: A damage layer having a hydrophobic property formed on the surface of an SiOC film 8 is changed to a modified layer 15 having a hydrophilic property by means of ammonia plasmas 14. Since the modified layer 15 is soluble in a hydrofluoric acid solution, etc., a clean SiOC film 8 is exposed on the surface by removing the modified layer 15. It is preferred that the thickness of the modified layer 15 is 0.5 nm-10 nm, more preferably 1 nm-5 nm. COPYRIGHT: (C)2006,JPO&NCIPI
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