发明名称 Semiconductor device and fabricating method thereof
摘要 An upper electrode layer is processed into plural electrode shapes with lithography and subsequent dry etching to pattern plural upper electrodes, followed by conducting an RTA treatment at a treatment temperature of a value in a range from 400° C. to 1000° C. and at an oxygen flow volume of a value in a range from 0.1 L/min to 100 L/min and, subsequently, by conducting an annealing treatment at a treatment temperature of 650° C. in an oxygen atmosphere for 60 minutes.
申请公布号 US2006118847(A1) 申请公布日期 2006.06.08
申请号 US20050093146 申请日期 2005.03.30
申请人 FUJITSU LIMITED 发明人 TAKAMATSU TOMOHIRO;FUJIKI MITSUSHI
分类号 H01L27/108;H01L21/8242 主分类号 H01L27/108
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