发明名称 |
High power density and/or linearity transistors |
摘要 |
Field effect transistors having a power density of greater than 25 W/mm when operated at a frequency of at least 4 GHz are provided. The power density may be at least 30 W/mm when operated at 4 GHz. The power density of at least 30 W/mm may be provided at a drain voltage of 120 V. Transistors with a power density of at least 30 W/mm when operated at 8 GHz are also provided. The power density of at least 30 W/mm may be provided at a drain voltage of 120 V. Field effect transistors having a power density of greater than 20 W/mm when operated at a frequency of at least 10 GHz are also provided. Field effect transistors having a power density of at least 2.5 W/mm and a two tone linearity of at least -30 dBc of third order intermodulation distortion at a center frequency of at least 4 GHz and a power added efficiency (PAE) of at least 40% are also provided.
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申请公布号 |
US2006118809(A1) |
申请公布日期 |
2006.06.08 |
申请号 |
US20040005107 |
申请日期 |
2004.12.06 |
申请人 |
PARIKH PRIMIT;WU YIFENG;SAXLER ADAM W |
发明人 |
PARIKH PRIMIT;WU YIFENG;SAXLER ADAM W. |
分类号 |
H01L29/24;H01L33/00 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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