SEMICONDUCTOR STRUCTURE HAVING STRAINED SEMICONDUCTOR AND METHOD THEREFOR

摘要

A first semiconductor structure (10) has a silicon substrate (12), a first silicon germanium layer (14) grown on the silicon, a second silicon germanium layer (16) on the first silicon germanium layer (14), and a strained silicon layer (18) on the second silicon germanium layer (16). A second semiconductor structure (22) has a silicon substrate (24) and an insulating top layer (26). The silicon layer (18) of the first semiconductor structure (10) is bonded to the insulator layer (26) to form a third semiconductor structure (30). The second silicon germanium layer (16) is cut to separate most of the first semiconductor structure (10) from the third semiconductor structure (30). The silicon germanium layer (16) is removed to expose the strained silicon layer (18) where transistors (32 & 34) are subsequently formed, which is then the only layer remaining from the first semiconductor structure (10). The transistors (32 & 34) are oriented along the <100> direction and at a 45 degree angle to the <100> direction of the base silicon layer (24) of the second semiconductor structure.