发明名称 |
Termial effect minimizing method in ECP process |
摘要 |
<p>Methods of forming a copper interconnect using an ECP process is disclosed. One disclosed method includes forming a barrier metal layer on the surface of a single or dual damascene structure; forming a silver layer as a seed layer on the surface of the barrier metal layer; forming a Cu layer on the silver layer by performing an ECP process using the silver layer as the seed layer; and performing an annealing process and a chemical mechanical polishing process for the Cu layer to form a Cu interconnect.</p> |
申请公布号 |
KR100587657(B1) |
申请公布日期 |
2006.06.08 |
申请号 |
KR20030102211 |
申请日期 |
2003.12.31 |
申请人 |
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发明人 |
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分类号 |
H01L21/28;H01L21/44;H01L21/4763;H01L21/768;H01L23/532 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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