| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic random access memory which makes the inverted magnetic field of a ferromagnetic free layer lowered and reduces current, when writing data. SOLUTION: The magnetic random access memory for making the inverted magnetic field drop includes a first antiferromagnetic layer, a fixed layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the fixed layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a metal multilayer formed on the ferromagnetic free layer. The metal multilayer is stacked with one or more metal layers and formed, such that the direction of the easy axis of magnetization of the ferromagnetic layer and the antiferromagnetic layer, which are located at the metal multilayer, and the direction of the easy axis of magnetization of the ferromagnetic free layer are orthogonal. COPYRIGHT: (C)2006,JPO&NCIPI
|
