| 摘要 |
PROBLEM TO BE SOLVED: To provide a method to reduce a local notching of a substrate with an insulating lower layer. SOLUTION: When etching a shape on the substrate 1 with an insulating lower layer 3 inside a chamber, an etching step by plasma and a passivated-layer depositing step by plasma are repeated alternately. Moreover, at least during the period of etching step, a bias (low-frequency bias) lower than the ion plasma frequency of the main composition of groups of 6, 7 existing in the plasma is applied to the substrate 1, or during the period of etching step, a repeatedly pulsed bias frequency is applied to the substrate 1, thereby the local etching of the substrate 1 or the damage of a charge on an interface with the insulating lower layer 3 is reduced or removed. Preferably, at least during the etching step, the repeatedly pulsed low frequency bias is applied to the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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