| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a flash memory element for improving element mass production capability, and for preventing the excessive shift of a threshold voltage in an E/W cycling(Erase/Write cycling) and bake process, and for improving the reliability of the element. SOLUTION: This method for manufacturing a flash memory element comprises a step for forming an oxide film on a semiconductor substrate, a step for carrying out a pre-annealing process in an N<SB>2</SB>gas atmosphere, a step for nitriding an oxide film by carrying out a main annealing process in 10 to 60 minutes in an N<SB>2</SB>O atmosphere of flow rate 5 to 15slm, and for forming a nitride oxide film and a step for carrying out a post-annealing process in an N<SB>2</SB>gas atmosphere. COPYRIGHT: (C)2006,JPO&NCIPI
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