发明名称 SOLID STATE IMAGE SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a solid state image sensor capable of imaging with a high sensitivity and high-speed driving while suppressing the generation of shading accompanied by the reduction of F-value in a camera lens system. SOLUTION: The solid state image sensor 100 is provided with a plurality of photoelectric conversion transmitting regions 1, extended into Y-direction on an n-type silicon substrate, and having photoelectric conversion function as well as signal charge transmitting function for transmitting signal charges obtained by the photoelectric conversion function in the Y-direction while being arrayed in X-direction on the n-type silicon substrate. The solid state imaging element is equipped with transmission electrodes 2, 3, 4 for supplying transmission pulses for controlling the potential of the photoelectric conversion transmitting regions 1 extended into X-direction so as to cover the photoelectric conversion transmitting regions 1, lining wirings 5, 6, 7 extended into Y-direction opposed to the photoelectric conversion transmitting regions 1 while pinching the transmission electrodes 2, 3, 4, and contact units 8, 9, 10 for electrically connecting the transmission electrodes 2, 3, 4 to the lining wirings 5, 6, 7. In this case, the lining wirings 5, 6, 7 are provided so as to be coped with only the local photoelectric conversion regions 1 on the n-type silicon substrate, and are constituted of a material which permits the penetration of light of long wavelength. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006147825(A) 申请公布日期 2006.06.08
申请号 JP20040335582 申请日期 2004.11.19
申请人 FUJI FILM MICRODEVICES CO LTD;FUJI PHOTO FILM CO LTD 发明人 SHIZUKUISHI MAKOTO
分类号 H01L27/148;H04N5/335;H04N5/369;H04N5/3725;H04N9/07 主分类号 H01L27/148
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