| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a silicon carbide single crystal, wherein the temperature distribution at a section for arranging a raw material for sublimation can be kept uniformly. SOLUTION: The apparatus for manufacturing the silicon carbide single crystal has a vessel for accommodating the raw material for sublimation and a seed crystal arrangement part provided opposite to the raw material for sublimation, which are used for manufacturing the silicon carbide single crystal by recrystallizing the sublimated silicon carbide on a seed crystal. The vessel for accommodating the raw material for sublimation has a heat-insulating part at the bottom part of a part for accommodating the raw material for sublimation. COPYRIGHT: (C)2006,JPO&NCIPI
|
