| 摘要 |
A semiconductor device, in which a semiconductor integrated circuit having a multi-level interconnection structure is formed, according to an embodiment of the present invention, comprises a copper wiring and an insulating layer formed on a top surface of the copper wiring, wherein the copper wiring includes an additive for improving adhesion between the copper wiring and the insulating layer, and a profile of the additive has a gradient in which a concentration is gradually reduced as it goes from the top surface of the copper wiring toward the inside thereof, and has the highest concentration on the top surface of the copper wiring.
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