| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS image sensor in which the property of an element is improved by reducing off current by preventing ion from being injected in the lower portion of a gate electrode at the time of ion injection for forming a source/drain region. SOLUTION: A method comprises the steps of forming a gate electrode on the transistor region of a first conduction type semiconductor substrate comprising a photodiode region and a transistor region, forming the second conduction type diffusion region of low concentration on the photodiode region and the transistor region of both sides of the gate electrode, forming an oxide film on the entire surface of the semiconductor substrate comprising the gate electrode, forming a light-sensitive film pattern such that the photodiode region and the gate electrode are covered, forming the second conduction type diffusion region of high concentration by injecting the second conduction type impurity ion of high concentration into the entire surface of the semiconductor substrate using the light-sensitive film pattern as a mask, and removing the light-sensitive film pattern and the oxide film. COPYRIGHT: (C)2006,JPO&NCIPI
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