| 摘要 |
An apparatus is provided for focusing electrons being emitted from a field emission device. The apparatus comprises a substrate ( 12,41,51 ) having first and second portions, and a cathode metal layer ( 20,44,52 ) formed over the substrate ( 12,41,51 ) in the first portion to partially define a sidewall ( 23 ) for a trench ( 25 ) in the second portion. A ballast layer ( 22,46,53 ) is formed over the substrate ( 12,41,51 ) in the second portion, the cathode metal layer ( 20,44,52 ), and the sidewall ( 23 ). A first dielectric layer ( 24,47,54 ) is formed over the ballast layer ( 22,46,53 ) in the first portion. A gate extraction metal layer ( 26,48,55 ) is formed over the first dielectric layer. At least one emitter ( 30 ) comprising a high aspect ratio conductive material is formed above the substrate and in the trench ( 25 ) having a sidewall ( 23 ) defined by the first dielectric layer ( 24,47,54 ) and the cathode metal layer ( 20,44,52 ). The ballast layer ( 22,46,53 ) extends along the sidewall and conductively contacts the cathode metal layer and the at least one emitter. An anode ( 32 ) is positioned to receive electrons from the at least one emitter ( 30 ). The ballast layer ( 22,46,53 ) provides a force that counteracts the sidewise pull of the gate extraction metal layer ( 26,48,55 ).
|
