Vertical cavity surface emitting laser with integrated electrostatic discharge protection

摘要

An electrostatic discharge (ESD) protected semiconductor device. The semiconductor device is formed as a monolithic structure. The monolithic structure includes a vertical cavity surface emitting laser (VCSEL) and a protection diode. The protection diode cathode is electrically coupled to the VCSEL anode and the protection diode anode is electrically coupled to the VCSEL cathode so as to provide ESD protection to the VCSEL.