发明名称 |
Process for producing high quality large size silicon carbide crystals |
摘要 |
The invention is an improvement in the method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. In a first embodiment, the improvement comprises reducing the number of macrosteps in a growing crystal by incorporating a high concentration of nitrogen atoms in the initial one (1) millimeter of crystal growth.
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申请公布号 |
US2006118037(A1) |
申请公布日期 |
2006.06.08 |
申请号 |
US20040006997 |
申请日期 |
2004.12.08 |
申请人 |
POWELL ADRIAN;TSVETKOV VALERI F;BRADY MARK;LEONARD ROBERT T |
发明人 |
POWELL ADRIAN;TSVETKOV VALERI F.;BRADY MARK;LEONARD ROBERT T. |
分类号 |
C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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