发明名称 |
Methods for forming dual damascene wiring using porogen containing sacrificial via filler material |
摘要 |
Methods for fabricating dual damascene interconnect structures are provided in which a sacrificial material containing porogen (a pore forming agent) is used for filling via holes in an interlayer dielectric layer such that the sacrificial material can be transformed to porous material that can be quickly and efficiently removed from the via holes without damaging or removing the interlayer dielectric layer.
|
申请公布号 |
US2006121721(A1) |
申请公布日期 |
2006.06.08 |
申请号 |
US20050223310 |
申请日期 |
2005.09.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE KYOUNG W.;SHIN HONG J.;KIM JAE H. |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|