| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device of a memory cell area smaller than a minimum memory cell area specified by a minimum processing size on a manufacturing process by using the smaller number of photographing processes, and to provide a method of manufacturing the semiconductor storage device. <P>SOLUTION: The semiconductor storage device of a cross-point structure provided with a plurality of upper electrodes 2 extending in the same direction and a plurality of lower electrodes 1 extending in a direction crossing orthogonally the extending direction of the upper electrodes 2 to form a storage material for accumulating data in layers between the upper electrodes 2 and the lower electrodes 1. The storage material is formed of a perovskite material, and formed to extend along the upper electrodes 2 to the side of the lower electrodes 1 of the respective upper electrodes 2. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
