发明名称 DISTRIBUTION FEEDBACK SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING SAME
摘要 PROBLEM TO BE SOLVED: To provide a distribution feedback semiconductor laser device capable of completely covering a diffraction grating by a clad layer without allowing a void to be generated, when the clad layer adjacent to the diffraction grating re-grows. SOLUTION: There are provided an active layer, a clad layer formed adjacently to the active layer, and a diffraction grating periodically formed at predetermined intervals, and the diffraction grating is constituted by a nonconductor generated by oxidization of a semiconductor material, and a distribution of a gain coefficient of the active layer is fluctuated by partly blocking a current injected into the active layer. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006148129(A) 申请公布日期 2006.06.08
申请号 JP20050337295 申请日期 2005.11.22
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM YOUNG-HYUN;RI JUKI;KIM IN;PARK SUNG-SOO
分类号 H01S5/12 主分类号 H01S5/12
代理机构 代理人
主权项
地址