| 摘要 |
PROBLEM TO BE SOLVED: To form continuously a barrier metal on a p-low k film. SOLUTION: The manufacturing method of a semiconductor device comprises an insulating film formation process (S102 to S108) of forming on the substrate an insulating film to the surface of which a methyl (CH<SB>3</SB>) group is coupled, and a barrier metal film formation process (114) of forming a barrier metal film on the insulating film surface using an imide-based high melting point metal compound as a raw material. In the barrier metal film formation process, the barrier metal film is formed by an atom layer vapor phase growing method. COPYRIGHT: (C)2006,JPO&NCIPI
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