| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III-V nitride semiconductor substrate of which a compound semiconductor layer can be grown flat on the substrate with uniform impurity distribution, and to provide a method of simply evaluating, in a short time, whether it is the substrate of which a compound semiconductor layer can be grown flat on the substrate with uniform impurity distribution or not. SOLUTION: Photoluminescence is measured at an arbitrary position on the surface of an independent group III-V nitride semiconductor substrate. A group III-V nitride semiconductor substrate is determined as sound product of good yield ifα<1, where strength ratioα=N<SB>1</SB>/N<SB>2</SB>, emission intensity at band end peak is N<SB>1</SB>, and the emission intensity at band end peak on the rear surface side of the same substrate corresponding to the measurement position is N<SB>2</SB>. COPYRIGHT: (C)2006,JPO&NCIPI
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