| 摘要 |
PROBLEM TO BE SOLVED: To improve a COD level by installing a window structure, without depending on doping of impurity to an end face of a resonator, in a semiconductor laser that uses a group III-V nitride compound semiconductor containing In. SOLUTION: In a manufacturing method of the semiconductor laser that uses the group III-V nitride compound semiconductor comprising In, the resonator end face 21 of the semiconductor laser is formed. The resonator end face 21 is exposed to plasma atmosphere containing H<SB>2</SB>or radical atmosphere containing H<SB>2</SB>. Desorption of In from vicinity of the resonator end face 21 is conducted. Thus, the window structure, where a band gap Eg of the active layer of the semiconductor laser is made large, is formed. COPYRIGHT: (C)2006,JPO&NCIPI
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