| 摘要 |
PROBLEM TO BE SOLVED: To prevent the deterioration of a ferroelectric layer due to hydrogen and water content. SOLUTION: The ferroelectric memory 10 is provided with a ferroelectric capacitor structure 30 that includes a ferroelectric layer 34 and is formed on a first insulating film 20, a first barrier film 40 that is formed to cover the ferroelectric capacitor structure and the first insulting film, a second insulating film 50 formed on the first barrier film, a first embedded contact 62a that is formed to penetrate the second insulating film and the first barrier film, a first wiring layer 70 formed on the second insulating film, an oxide film 72 formed on the first wiring layer, a second barrier film 80 that is formed to cover the oxide film, the first wiring layer and the second insulating film, a third insulating film 90 formed on the second barrier film, a second embedded contact 64a that is formed to penetrate the third insulating film, the second barrier film and the oxide film, and a second wiring layer 76 formed on the third insulating film. COPYRIGHT: (C)2006,JPO&NCIPI
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