| 摘要 |
PROBLEM TO BE SOLVED: To obtain a film with an ITO transparent conductive membrane with almost as low resistance as one filmed on a glass substrate, with a substrate free from warping after filing of the ITO transparent conductive film. SOLUTION: The film with an ITO transparent conductive membrane is formed by filming an ITO transparent conductive membrane with a temperature of a film substrate kept within the temperature range of 90°C to 145°C at the time of filming by an ion plating method using a film substrate mainly composed of polyethylene naphthalate and using a plasma gun, with a specific resistance within the range of 1.1×10<SP>-4</SP>to 3.0×10<SP>-4</SP>Ω. Moreover, an arithmetical mean roughness Ra(i) of a film surface to that Ra(f) of a film substrate surface satisfies Ra(i)-Ra(f)≤2nm. COPYRIGHT: (C)2006,JPO&NCIPI
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