| 摘要 |
The invention relates to a method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate ( 5 ), which is situated inside a process chamber ( 2 ) of a reactor ( 1 ) while being supported by a substrate holder ( 4 ). The layer is comprised of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor ( 1 ) in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy. The first reaction gas flows in a direction ( 11 ) toward the substrate holder ( 4 ) through a multitude of openings ( 6 ), which are distributed over a surface ( 18 ) of a gas inlet element ( 3 ), said surface being located opposite the substrate holder ( 4 ). According to the invention, the second process gas is preconditioned with a plasma before entering the process chamber ( 1 ), and it enters the process chamber ( 2 ) at the edge ( 19 ) of the substrate holder ( 4 ) directly thereabove and flows parallel to the substrate holder surface.
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