| 摘要 |
PROBLEM TO BE SOLVED: To improve operating characteristics and reliability of a semiconductor device by making a TFT structure be suitable for a function of a circuit, and to achieve reduction of a manufacturing cost and increase in a yield by reducing power consumption and the number of steps. SOLUTION: The semiconductor device has a semiconductor layer on an insulating surface, a first insulating layer on the semiconductor layer, and a gate wire including a gate electrode and overlapping with the semiconductor layer on the first insulating layer, wherein the gate electrode has a lower conductive layer with a taper-shaped end and an upper conductive layer with the width narrower than that of the lower conductive layer and with a taper-shaped end, and the region of the first insulating layer on the semiconductor layer, in contact with the end of the gate electrode is taper-shaped. COPYRIGHT: (C)2006,JPO&NCIPI |
