发明名称 |
SHIELD CONFIGURATION FOR VACUUM CHAMBER |
摘要 |
PROBLEM TO BE SOLVED: To eliminate unfavorable tensile stresses in a sputter deposited material to be deposited on a non-processed surface by heating so that the temperature of a shield reaches nearly the temperature of the sputter deposited material. SOLUTION: A shield 46 in a PVD (physical vapor deposition) vacuum processing chamber 30 is constituted so that generation of particles due to peeling off from the shield 46 and from arcing between a biased target and surrounding grounded pieces is reduced or prevented. The shield 46 has an "h" cross section with the lower arch of the "h" cross section facing a heater assembly which heats the shield 46 to a temperature approximately equivalent to the temperature of the sputter deposited material. The surface of the shield 46 is polished to promote the release of H<SB>2</SB>O molecules from its surface during the time when a vacuum is initially being pumped. The inside surface of the shield 46 (facing a heater assembly) is treated so as to have a higher coefficient of surface emissivity than the outer surface in order to enhance the efficiency of heating by retaining much more energy. COPYRIGHT: (C)2006,JPO&NCIPI
|
申请公布号 |
JP2006144129(A) |
申请公布日期 |
2006.06.08 |
申请号 |
JP20060016865 |
申请日期 |
2006.01.25 |
申请人 |
AKT KK |
发明人 |
HOSOKAWA AKIHIRO;DEMARAY RICHARD E;BERKSTRESSER DAVID E |
分类号 |
C23C14/34;C23C14/00;C23C14/56;H01J37/32;H01J37/34;H01L21/203 |
主分类号 |
C23C14/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|