发明名称 SHIELD CONFIGURATION FOR VACUUM CHAMBER
摘要 PROBLEM TO BE SOLVED: To eliminate unfavorable tensile stresses in a sputter deposited material to be deposited on a non-processed surface by heating so that the temperature of a shield reaches nearly the temperature of the sputter deposited material. SOLUTION: A shield 46 in a PVD (physical vapor deposition) vacuum processing chamber 30 is constituted so that generation of particles due to peeling off from the shield 46 and from arcing between a biased target and surrounding grounded pieces is reduced or prevented. The shield 46 has an "h" cross section with the lower arch of the "h" cross section facing a heater assembly which heats the shield 46 to a temperature approximately equivalent to the temperature of the sputter deposited material. The surface of the shield 46 is polished to promote the release of H<SB>2</SB>O molecules from its surface during the time when a vacuum is initially being pumped. The inside surface of the shield 46 (facing a heater assembly) is treated so as to have a higher coefficient of surface emissivity than the outer surface in order to enhance the efficiency of heating by retaining much more energy. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006144129(A) 申请公布日期 2006.06.08
申请号 JP20060016865 申请日期 2006.01.25
申请人 AKT KK 发明人 HOSOKAWA AKIHIRO;DEMARAY RICHARD E;BERKSTRESSER DAVID E
分类号 C23C14/34;C23C14/00;C23C14/56;H01J37/32;H01J37/34;H01L21/203 主分类号 C23C14/34
代理机构 代理人
主权项
地址