发明名称 |
Dummy metal fill shapes for improved reliability of hybrid oxide/low-k dielectrics |
摘要 |
Semiconductor structure including a first rigid dielectric layer and a second rigid dielectric layer. A first non-rigid low-k dielectric layer is formed between the first and second rigid dielectric layer. A plurality of dummy fill shapes is formed in the first non-rigid layer which replace portions of the first non-rigid low-k dielectric layer with lower coefficient of thermal expansion (CTE) metal such that an overall CTE of the first non-rigid low-k dielectric layer and the plurality of dummy fill shapes matches a CTE of the first and second rigid dielectric layers more closely than that of the first non-rigid low-k dielectric layer alone.
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申请公布号 |
US2006118960(A1) |
申请公布日期 |
2006.06.08 |
申请号 |
US20060330203 |
申请日期 |
2006.01.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LANDIS HOWARD S. |
分类号 |
H01L23/52;H01L23/522 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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