| 摘要 |
A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active Cu<SUB>x</SUB>Cl<SUB>y</SUB>, wherein x is 1 to 3, y is 1 to 3, gas, and forming a copper film by transporting the Cu<SUB>x</SUB>Cl<SUB>y </SUB>gas onto the surface of a substrate to be processed. By using inexpensive high-purity copper and inexpensive chlorine, hydrogen chloride, or chlorine and hydrogen as source gases, a copper film containing no residual impurity such as carbon and having high film quality can be formed with high reproducibility.
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