NORMALLY-OFF INTEGRATED JFET POWER SWITCHES IN WIDE BANDGAP SEMICONDUCTORS AND METHODS OF MAKING

摘要

Wide bandgap semiconductor devices including normally-off VJFET integrated
power switches are described. The power switches can be implemented
monolithically or hybridly, and may be integrated with a control circuit built
in a single-or multi-chip wide bandgap power semiconductor module. The devices
can be used in high-power, temperature-tolerant and radiation-resistant
electronics components. Methods of making the devices are also described.