| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photomask having a fine photomask pattern formed thereon with high precision, and also to provide a photomask blank for the photomask. <P>SOLUTION: A light-shieldable film 12 is formed on an optical film 15 such as a halftone phase shift film formed on one principal surface of an optically transparent substrate 11, wherein the light-shieldable film 12 comprises a first light-shieldable film 13 and a second light-shieldable film 14 successively layered. The first light-shieldable film 13 is the film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldale film 14 is the film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal (such as molybdenum (Mo)) oxide, silicon/transition metal nitride or silicon/transition metal oxynitride. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
