| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an input/output structure of a semiconductor, with which size reduction and price lowering of a high-frequency power amplifier are achievable, by significantly reducing the phase difference in the width direction between the center part and edge parts of the gate electrode and the drain electrode of an FET to make the maximum available power gain and power-added efficiency of the FET 1 part improved. <P>SOLUTION: A dielectric board 5 and an FET 1 are fixed on a metal carrier 6, and on this board 5 on which microstrip lines are formed. The gate electrode 2 and drain electrode 3 of the FET 1, and input/output upper electrodes 7 of the microstrip lines, which are wider than the microstrip lines, are mutually connected respectively by a plurality of metal wires 4, wherein the lengths of the metal wires 4 are, such that the length is larger, as the position of the wire approaches closer from the edge parts to the center part in the width direction of the FET 1. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
