发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR LASER EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser equipment for emitting a laser beam with high positional accuracy, by mounting a semiconductor laser element on a semiconductor substrate, with high accuracy and reliability. SOLUTION: A semiconductor laser element is placed over an SiN film formed on a p-type layer, with a heat sink layer and a solder layer (about 4μm of layer thickness), in addition to a Ti layer and an Au layer in between. The heat sink layer is inserted between the Au layer and the Ti layer and is approximately 20μm thick. The thickness of the heat sink layer is larger than that of the Au layer (0.4μm for the film thickness) for acquiring a mounting position for the semiconductor laser element in the thickness direction of the substrate. Further, a mirror part, acting as a reflecting part for a semiconductor laser beam, comprises an Al layer and a dielectric layer to form a reflecting film structure which exhibits high reflectance properties with respect to blue light. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006148163(A) 申请公布日期 2006.06.08
申请号 JP20060042588 申请日期 2006.02.20
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OBARA NAOKI;MATSUDA TOSHIO;IWAMOTO NOBUYUKI;TAKAMORI AKIRA
分类号 H01S5/026 主分类号 H01S5/026
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