MULTI-BIT NONVOLATILE MEMORY DEVICE, OPERATING METHOD AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a multi-bit nonvolatile memory device, and an operating method and a manufacturing method of the same. SOLUTION: There is provided a multi-bit nonvolatile memory device comprising a channel region formed on a semiconductor substrate, a source or a drain forming a shottky contact with the channel region, a central gate electrode formed on a part of the channel region, first and second side wall gate electrodes formed in the channel region outside the central gated electrode, and first and second storage nodes formed between the channel region and the side wall gate electrode. COPYRIGHT: (C)2006,JPO&NCIPI