| 摘要 |
PROBLEM TO BE SOLVED: To simplify a process of forming the bonding electrode of a semiconductor device, reduce the manufacturing cost, and reduce the resistance. SOLUTION: The semiconductor device includes a first interlayer insulating film formed on a semiconductor substrate, a second interlayer insulating film, formed on the first interlayer insulation film and having a plurality of grooves, a first barrier metal formed on the surface in the groove, a first wiring part having a copper film formed on the first barrier metal and a first bonding electrode, a second barrier metal formed on the first wiring and the first bonding electrode, a second wiring having a metal film formed on the first wiring via a second barrier metal, a second bonding electrode having a metallic film formed on the first bonding electrode via the second barrier metal, and a third interlayer insulating film for covering the second wiring and the second bonding electrode and having an opening to cause the surface of the second bonding electrode to be exposed. COPYRIGHT: (C)2006,JPO&NCIPI
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