| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element in which resistance can be reduced by reducing oxygen remaining in a metal silicide film when it is formed on an SOI substrate through a silicon oxide film. SOLUTION: A step for forming a CMOS transistor on an SOI substrate 100 and then forming a silicon oxide film 801 having a thickness of 0.5-2 nm on a silicon film 103, a step for forming a titanium film 803, a step for forming a titanium nitride film 901 as a barrier film for preventing the intrusion of oxygen and nitrogen, a step for performing low-temperature heat treatment for forming a C49 crystal phase titanium silicide film 902, and a step for removing only the titanium nitride film 901 and a nonreaction titanium film 901 selectively by etching are carried out sequentially. COPYRIGHT: (C)2006,JPO&NCIPI
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