| 摘要 |
PROBLEM TO BE SOLVED: To obtain an SOI-MOS transistor which can make a separation lower silicon film into low resistance, and to provide its manufacturing method. SOLUTION: The SOI-MOS transistor comprises an insulating film, a body region with a channel and a source drain provided on the insulating layer, a body contact region set apart from the body region and provided on the insulating layer, a separation oxide film for separating the body region and the body contact region, and a separation lower silicon film for connecting the body region and the body contact region provided under the separation oxide film. The bottom of the separation lower silicon film is lower than the bottom of the body region. COPYRIGHT: (C)2006,JPO&NCIPI
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